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613.

A silicon wafer has 100nm of oxide on it and is inserted in a furnace at a temperature above 1000ºC for further oxidation in dry oxygen. The oxidation rate [1 mark]
(A) is independent of current oxide thickness and temperature
(B) is independent of current oxide thickness but depends on temperature
(C) slows down as the oxide grows
(D) is zero as the existing oxide prevents further oxidation

asked in Electronics and Communication Engineering, 2008

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614.

In the following limiter circuit, an input voltage V_i = 10sin100πt applied. Assume that the diode drop is 0.7V when it is forward biased. The Zener breakdown voltage is 6.8V.

The maximum and minimum values of the output voltage respectively are
[1 mark]
(A) 6.1V, − 0.7V
(B) 0.7V, − 7.5V
(C) 7.5V, − 0.7V
(D) 7.5V, − 7.5V

asked in Electronics and Communication Engineering, 2008

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615.

For static electric and magnetic fields in an inhomogeneous source-free medium, which of the following represents the correct form of two of Maxwell’s equations? [1 mark]
(A) ∇.E=0, ∇xB=0
(B) ∇.E=0, ∇.B=0
(C) ∇xE=0, ∇xB=0
(D) ∇xE=0, ∇.B=0

asked in Electronics and Communication Engineering, 2008

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616.

For a Hertz dipole antenna, the half power beam width (HPBW) in the E-plane is [1 mark]
(A) 360º
(B) 180º
(C) 90º
(D) 45º

asked in Electronics and Communication Engineering, 2008

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617.

Which of the following is true? [1 mark]
(A) A silicon wafer heavily doped with boron is a p⁺ substrate
(B) A silicon wafer lightly doped with boron is a p⁺ substrate
(C) A silicon wafer heavily doped with arsenic is a p⁺ substrate
(D) A silicon wafer lightly doped with arsenic is a p⁺ substrate

asked in Electronics and Communication Engineering, 2008

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618.

Which of the following is NOT associated with a p-n junction? [1 mark]
(A) Junction capacitance
(B) Charge Storage Capacitance
(C) Depletion Capacitance
(D) Channel Length Modulation

asked in Electronics and Communication Engineering, 2008

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