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271.

Assuming that the β of the transistor is extremely large and V_BE = 0.7V, I_c and V_CE in the circuit shown in Figure, are

[2 marks]
(a) I_c = 1mA, V_CE = 4.7V
(b) I_c = 0.5mA, V_CE = 3.75V
(c) I_c = 1mA, V_CE = 2.5V
(d) I_c = 0.5mA, V_CE = 3.9V

asked in Electronics and Communication Engineering, 2004

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272.

The neutral base width of a bipolar transistor, biased in the active region, is 0.5 µm. the maximum electron concentration and the diffusion constant in the base are 10¹⁴/cm³ and D_n = 25 cm²/sec respectively. Assuming negligible
recombination I the base, the collector current density is (the electron charge is 1.6×10^-19 coulomb) [2 marks]
(a) 800 A/cm²
(b) 8 A/cm²
(c) 200 A/cm²
(d) 2 A/cm²

asked in Electronics and Communication Engineering, 2004

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273.

The longest wavelength that can be absorbed by silicon, which has the bandgap of 1.12eV, is 1.1µm. If the longest wavelength that can be absorbed by another material is 0.87 µm, then the bandgap of this material is
[2 marks]
(a) 1.416 eV
(b) 0.886 eV
(c) 0.854 eV
(d) 0.706 eV

asked in Electronics and Communication Engineering, 2004

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274.

The drain of an n-channel MOSFET is shorted to the gate so that V_GS = V_DS. The threshold voltage (V_T) of MOSFET is 1V. If the drain current (I_D) is 1 mA for V_GS = 2V, then for V_GS = 3V, I_D is [2 marks]
(a) 2 mA
(b) 3 mA
(c) 9 mA
(d) 4 mA

asked in Electronics and Communication Engineering, 2004

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275.

Consider the following statements S1 and S2.
S1: The threshold voltage (V_T) of a MOS capacitor decreases with increase in gate oxide thickness
S2: The threshold voltage (V_T) of a MOS capacitor decreases with increase in substrate doping concentration.
Which one of the following is correct? [2 marks]
(a) S1 is FALSE and S2 is TRUE
(b) both S1 and S2 are TRUE
(c) S1 is TRUE and S2 is FALSE
(d) both S1 and S2 are FALSE

asked in Electronics and Communication Engineering, 2004

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276.

Consider an abrupt p-junction. Let V_bi be the built-in potential of this junction and V_R be the applied reverse bias. If the junction capacitance (C₁) is 1 pF for V_bi + V_R=1V, then for V_bi + V_R = 4V, C_j will be [2 marks]
(a) 4 pF
(b) 2 pF
(c) 0.25 pF
(d) 0.5 pF

asked in Electronics and Communication Engineering, 2004

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