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355.

A Silicon PN junction diode under reverse bias has depletion region of width 10 µm. The relative permittivity of Silicon, ε_r= 11.7 and the permittivity of free space ε_o = 8.85×10^-18 F/m. The depletion capacitance of the diode per square meter is [2 marks]
(a) 100 µF
(b) 10 µF
(c) 1 µF
(d) 20 µF

asked in Electronics and Communication Engineering, 2005

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356.

A silicon sample A is doped with 10¹⁸ atoms/cm³ of Boron. Another sample B of identical dimensions is doped with 10¹⁸ atoms/cm³ of Phosphorus. The ratio of electron to hole mobility is 3. The ratio of conductivity of the sample A to B is [2 marks]
(A) 3
(B) 1/3
(C) 2/3
(D) 3/2

asked in Electronics and Communication Engineering, 2005

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357.

A square pulse of 3 volts amplitude is applied to C-R circuit shown in figure. The capacitor is initially uncharged. The output voltage v_o at time t=2 sec is

[2 marks]
(a) 3 V
(b) -3V
(c) 4 V
(d) -4V

asked in Electronics and Communication Engineering, 2005

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358.

The h parameters of the circuit shown in figure are

[2 marks]

asked in Electronics and Communication Engineering, 2005

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359.

If R₁=R₂=R₄=R and R₃ = 1.1R in the bridge circuit shown in figure, then the reading in the ideal voltmeter connected between a and b is [2 marks]

(a) 0.238 V
(b) 0.138 V
(c) -0.238 V
(d) 1 V

asked in Electronics and Communication Engineering, 2005

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360.

For the circuit shown in figure, Thevenin’s voltage and Thevenin’s equivalent resistance at terminals a – b is [2 marks]

(a) 5 V and 2 Ω
(b) 7.5 V and 2.5 Ω
(c) 4 V and 2 Ω
(d) 3 V and 2.5 Ω

asked in Electronics and Communication Engineering, 2005

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