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463.

Let x(t) ↔ X(jω) be Fourier Transform pair. The Fourier Transform of the signal x(5t-3) in terms of X(jω) is given as [1 mark]
(A) (e^-j3ω/5)/5 X(jω/5)
(B) (e^j3ω/5)/5 X(jω/5)
(C) (e^-j3ω)/5 X(jω/5)
(D) (e^j3ω)/5 X(jω/5)

asked in Electronics and Communication Engineering, 2006

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464.

The number of product terms in the minimized sum-of-product expression obtained through the following K-map is (where “d” denotes don’t care states)

1 0 0 1

0 d 0 0

0 0 d 1

1 0 1 1

[1 mark]
(A) 2
(B) 3
(C) 4
(D) 5

asked in Electronics and Communication Engineering, 2006

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465.

An n-channel depletion MOSFET has following two points on its ID-VGS curve :
(i) V_GS = 0 at I_D = 12 mA and
(ii) V_GS = -6 Volts at I_D = 0
Which of the following Q-points will give the highest trans-conductance gain for small signals? [1 mark]
(A) V_GS = -6 Volts
(B) V_GS = -3 Volts
(C) V_GS = 0 Volts
(D) V_GS = 3 Volts

asked in Electronics and Communication Engineering, 2006

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466.

The input impedance (Z_i) and the output impedance (Z_o) of an ideal transconductance (voltage controlled current source) amplifier are
[1 mark]
(A) Z_i = 0, Z_o = 0
(B) Z_i = 0, Z_o = ∞
(C) Z_i = ∞, Z_o = 0
(D) Z_i = ∞, Z_o = ∞

asked in Electronics and Communication Engineering, 2006

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467.

The phenomenon known as “Early Effect” in a bipolar transistor refers to a reduction of the effective base-width caused by [1 mark]
(A) electron-hole recombination at the base
(B) the reverse biasing of the base-collector junction
(C) the forward biasing of emitter-base junction
(D) the early removal of stored base charge during saturation-to-cutoff switching.

asked in Electronics and Communication Engineering, 2006

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468.

Under low level injection assumption, the injected minority carrier current for an extrinsic semiconductor is essentially the [1 mark]
(A) diffusion current
(B) drift current
(C) recombination current
(D) induced current

asked in Electronics and Communication Engineering, 2006

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