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Group I lists four different semiconductor device. Match each device in Group I with its characteristic property in Group II.
Group I Group II P. BJT 1.Population inversion Q. MOS Capacitor 2. Pinch-off Voltage R. Laser Capacitor 3. Early effect S. JFET 4. Flat-band voltage
(A) P-3, Q-1, R-4, S-2
(B) P-2, Q-4, R-3, S-2
(C) P-3, Q-4, R-1, S-2
(D) P-3, Q-2, R-1, S-4
asked in Electronics and Communication Engineering, 2007
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520.
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521.
Group I lists four types of p-n junction diodes. Match each device in Group I with one of the Options in Group II to indicate the bias condition of that device in its normal mode of operation
Group I Group II P. Zener Diode 1. Forward Bias Q. Solar Cell 2. Reverse Bias R. Laser Diode S. Avalanche Photodiode
(A) P-1, Q-2, R-1, S-2
(B) P-2, Q-1, R-1, S-2
(C) P-2, Q-2, R-1, S-1
(D) P-2, Q-1, R-2, S-2
asked in Electronics and Communication Engineering, 2007
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522.